Negative ion of boron:: An experimental study of the 3P ground state

被引：64

作者：

Scheer, M ^{[1
]}

Bilodeau, RC

Haugen, HK

机构：

[1] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4M1, Canada

[3] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada

[4] McMaster Univ, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4M1, Canada

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.80.2562

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An investigation of the B-(2p(2 3)P(J)) --> B(2p P-2(J),) photodetachment thresholds using a tunable infrared laser source has yielded a substantially improved value for the electron affinity of boron and the first experimental data on the fine structure of the ionic ground state. The J = 0-1 and J = 1-2 splittings are found to be 3.23(15) cm(-1) and 5.18(15) cm(-1), respectively, and the electron affinity is determined to be 2256.12(20) cm(-1) [(279.723(25) meV]. The present result for the electron affinity is the first to challenge the extensive and controversial theoretical studies of this system.

引用

页码：2562 / 2565

页数：4

共 41 条

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