Enhancement of giant magnetoresistance in NiCoFe/Cu/Co with a Ag capping layer prepared by sputtering

被引：4

作者：

Sugita, Y ^{[1
]}

Satomi, M ^{[1
]}

Kawawake, Y ^{[1
]}

Sakakima, H ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Cent Res Labs, Kyoto 61902, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 01期

关键词：

giant magnetoresistance; specular scattering; Ag capping layer; spin-valves; sputtering;

D O I：

10.1143/JJAP.37.109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhancement of giant magnetoresistance (GMR) in NiCoFe/Cu/Co with the addition of Cu/Ag capping layers prepared by sputtering on Si(001) single crystal substrates with Cu buffer layer was observed. This enhancement of magnetoresistance (MR) ratio may be attributed to the specular scattering of conduction electrons at the surface of the Ag capping layer. The dependence of the MR ratio on the Ag capping layer thickness was visible in the broad peaks at around t(Ag)=2 nm.

引用

页码：109 / 110

页数：2

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