The fine structure of excitonic levels in CdSe nanocrystals

被引：55

作者：

Gupalov, SV ^{[1
]}

Ivchenko, EL ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2000年 / 42卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1324036

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The fine structure of the exciton ground level in a spherical nanocrystal of a zincblende or a wurtzite structure semiconductor was calculated with the inclusion of short- and long-range (nonanalytical), exchange-interaction components. The band-parameter dependence of the long-range exchange-interaction contribution to the spin Hamiltonian describing the exciton ground-level splitting was found. A study was made of the effect exerted on the exciton-level fine structure by the difference between the background dielectric permittivities of the nanocrystal and of the dielectric host in which it was grown. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：2030 / 2038

页数：9

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