Preparation of B-C-N thin films by rf plasma assisted CVD

被引：60

作者：

Polo, MC ^{[1
]}

Martinez, E ^{[1
]}

Esteve, J ^{[1
]}

Andujar, JL ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Elect, E-08028 Barcelona, Spain

来源：

关键词：

B-C-N films; rf plasma CVD; hard coatings; microhardness;

D O I：

10.1016/S0925-9635(97)00167-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron-carbon-nitrogen (BCxNy) films were grown on silicon substrates heated at 300 degrees C by r.f. plasma assisted chemical vapour deposition from CH4-N-2-B2H6 gas mixtures. Dense and smooth films with different x:y composition ratios were obtained by varying the flow rate of the precursor gases. The analysis by X-ray photoelectron and infrared spectroscopies of the films revealed the formation of an hybrid B-C-N phase. Microhardness measurements performed with a nanoindenter showed that the mechanical properties of the BCxNy films depended on their composition and some of them presented a hardness higher (13 GPa) than that of hexagonal boron nitride films (12 GPa). (C) 1998 Elsevier Science S.A.

引用

页码：376 / 379

页数：4

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