Fault-tolerant, scalable organic light-emitting device architecture

被引:28
作者
Duggal, AR [1 ]
Foust, DF [1 ]
Nealon, WF [1 ]
Heller, CM [1 ]
机构
[1] GE Global Res Ctr, Niskayuna, NY 12309 USA
关键词
D O I
10.1063/1.1569653
中图分类号
O59 [应用物理学];
学科分类号
摘要
High performance organic light emitting diodes (OLEDs) become problematic as emitting area increases due to the high resistivity of the transparent electrode and the increasing probability of encountering a catastrophic short-circuit defect during fabrication. In this letter, a monolithic series-connected OLED architecture is demonstrated. It is shown that such devices exhibit the same power efficiency as traditional small area OLEDs but are, in addition, relatively insensitive to electrode resistivity and tolerant to normally catastrophic short-circuit defects. This architecture should enable applications such as lighting where scalability to large emitting area without high fabrication cost or design complexity is required. (C) 2003 American Institute of Physics.
引用
收藏
页码:2580 / 2582
页数:3
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