X-Ray masks for very deep X-Ray lithography

被引:22
作者
Klein, J
Guckel, H
Siddons, DP
Johnson, ED
机构
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[2] Brookhaven Natl Lab, Natl Synchrotron Light Source Dept, Upton, NY 11973 USA
关键词
Radiation; Aspect Ratio; Photon Energy; Synchrotron Radiation; High Aspect Ratio;
D O I
10.1007/s005420050098
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The high aspect ratio, deep x-ray lithography and electrodeposition process [Becker et al. (1986)] can be expensive unless throughput is high enough. The use of a very high energy synchrotron has allowed the cost of exposure to be significantly reduced through simultaneous exposure of stacked photoresist [Guckel et al (1994)]. Synchrotron radiation at high photon energies has resulted the use of a large area x-ray mask, Both stacked exposures and a large area x-ray masks have significantly increased the throughput of the deep x-ray lithography and electrodeposition process.
引用
收藏
页码:70 / 73
页数:4
相关论文
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