Low threshold, room temperature laser diode pumped Sb-based V(E)under-bar-CSEL emitting around 2.1 μm

被引：33

作者：

Cerutti, L

Garnache, A

Genty, F

Ouvrard, A

Alibert, C

机构：

[1] Univ Montpellier 2, CNRS, UMR 5507, Ctr Elect & Microoptoelect Montpellier CEM2, F-34095 Montpellier 05, France

[2] RIBER SA, F-92503 Rueil Malmaison, France

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 03期

关键词：

D O I：

10.1049/el:20030192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.1 mum is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A TEM00 low-divergence laser operation is demonstrated in quasi-CW (10 mus pulses, 10% duty cycle) from 250 up to 350K. A threshold as low as 390W/cm(2) at 250K combined with a T-0 around 33K has been measured.

引用

页码：290 / 292

页数：3

共 6 条

[1]

CERUTI L, 2002, IPRM 2002 STOCKH SWE

[2]

GARNACHE A, 2002, P IEEE IPRM 2002 STO

[3] Wavelength modulation detection of water vapor with a vertical cavity surface-emitting laser [J].