Influences of evaporation temperature on electronic structures and electrical properties of molybdenum oxide in organic light emitting devices

被引:26
作者
Lin, Chang-Ting [1 ,2 ]
Yeh, Cheng-Hung [1 ,2 ]
Chen, Mei-Hsin [1 ,2 ]
Hsu, Shu-Han [1 ,2 ]
Wu, Chih-I [1 ,2 ]
Pi, Tun-Wen [3 ]
机构
[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan
关键词
DIODES; ALUMINUM; FILMS; LAYER; MOO3;
D O I
10.1063/1.3309783
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of evaporation temperatures on the electronic structures of molybdenum oxide (MoOx) films and the electrical properties of organic light emitting diodes were investigated. MoOx films evaporated at a high temperature and a high deposition rate are close to a stoichiometric phase, but become less effective when they are used as a hole injection layer. However, when MoOx is evaporated at a lower temperature and a slower rate, there are large amounts of defect-related states present in the forbidden gap, which make the films behave like a high work function conductor and an effective hole injection layer. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3309783]
引用
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页数:3
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