Amorphous structure and electronic properties of the Ge1Sb2Te4 phase change material

被引:31
作者
Raty, Jean-Yves [1 ]
Otjacques, Celine [1 ]
Gaspard, Jean-Pierre [1 ]
Bichara, Christophe [2 ,3 ]
机构
[1] Univ Liege, B-4000 Sart Tilman Par Liege, Belgium
[2] CNRS, CINaM, F-13288 Marseille, France
[3] Univ Aix Marseille, F-13288 Marseille, France
关键词
Phase change materials; ab Initio simulation; Amorphous materials; Electronic properties; Semiconductor-metal transition;
D O I
10.1016/j.solidstatesciences.2009.06.018
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Ge1Sb2Te4 is one of the most commonly used phase change materials, due to the large optical and electrical contrast between a metastable crystalline phase and the amorphous phase. We use ab initio molecular dynamics to generate an amorphous Ge1Sb2Te4 structure. By analysing the distance distributions, we show that the structure can be analysed in terms of 21% of tetrahedrally coordinated Ge atoms and 79% of 3-fold Ge atoms. These are involved in distorted octahedral shells with bond length correlations that are similar to the a-GeTe structure as a consequence of a Peierls-distortion. The electronic properties are shown to be in reasonable agreement with the experiment with an electronic gap of 0.45 eV with. The optical conductivity curve is also in agreement with the experiment, with a maximal conductivity at an energy of similar to 3 eV. (C) 2009 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:193 / 198
页数:6
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