Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode

被引：6

作者：

Komolov, A

Schaumburg, K

Monakhov, V

机构：

[1] Univ Copenhagen, Dept Chem, CISMI, DK-2100 Copenhagen, Denmark

[2] St Petersburg State Univ, Fac Phys, Phys Res Inst, St Petersburg, Russia

来源：

THIN SOLID FILMS | 1997年 / 311卷 / 1-2期

关键词：

interfaces; Langmuir-Blodgett films (LB films); photovoltage; semiconductors;

D O I：

10.1016/S0040-6090(97)00446-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photovoltage properties of multilayer Langmuir-Blodgett (LB) films of corbathiene (similar to 100 nm thick) on the n-Si substrate with semitransparent top gold electrode have been investigated. Measurements of photovoltage dependence on wavelength and intensity of exciting light have been performed. The photovoltage values attaining 0.4 V are well reproducible when subjected to illumination of intensity up to 10(14) photons cm(-2) s(-1) in the wavelength range 300-900 nm. The results are related to the major role of the film/substrate interface and to the films optical absorption features. (C) 1997 Elsevier Science S.A.

引用

页码：259 / 261

页数：3

共 10 条

[1] U-SHAPED DISTRIBUTION OF INTERFACE STATES IN METAL (LANGMUIR-BLODGETT) SI STRUCTURES WITH PHTHALOCYANINE LANGMUIR-BLODGETT-FILMS [J].