High-Q ring resonators in thin silicon-on-insulator

被引:54
作者
Baehr-Jones, T [1 ]
Hochberg, M [1 ]
Walker, C [1 ]
Scherer, A [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
关键词
D O I
10.1063/1.1781355
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values of 45 000 in these rings, which were then improved to 57 000 by adding a PMMA cladding. The optimal waveguide designs were calculated, and the waveguide losses were analyzed. These high-Q resonators are expected to lead to interesting devices for telecommunication filters and sources as well as optical refractive index sensing. (C) 2004 American Institute of Physics.
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收藏
页码:3346 / 3347
页数:2
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