Transport in n+(p+) Si-AlQ-Al junctions

In this article, we report on transport across n(+)(p(+)) c-Si/AlQ/Al junctions where AlQ is tris(8-hydroxy quinolato)aluminum, and n(+) and p(+) are n and p type degenerately doped crystalline silicon (c-Si). Specifically, we show that n(+) c-Si is a very efficient electron injector into AlQ. We have studied the temperature and thickness dependence of AlQ on the current-voltage characteristics to understand transport in AlQ. From these measurements, we show that transport in AlQ is injection limited and the current is limited by tunneling injection from the contact into AlQ. We also report on the influence of the interface and gap states on transport in AlQ. (C) 2000 American Institute of Physics. [S0021-8979(00)00621-6].