Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia

被引：135

作者：

Becker, JS ^{[1
]}

Gordon, RG ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1565699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly uniform, smooth, and conformal coatings of tungsten nitride (WN) were synthesized by atomic layer deposition (ALD) from vapors of bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia. The films are shiny, silver colored, and electrically conducting. The films were amorphous as deposited. 100% step coverage was obtained inside holes with aspect ratios greater than 40:1. WN films as thin as 1.5 nm proved to be good barriers to diffusion of copper for temperatures up to 600 degreesC. Annealing for 30 min at temperatures above 725 degreesC converted the WN to pure, polycrystalline tungsten metal. ALD of copper onto the surface of the WN produced strongly adherent copper films that could be used as "seed" layers for chemical vapor deposition or electrodeposition of thicker copper coatings. (C) 2003 American Institute of Physics.

引用

页码：2239 / 2241

页数：3

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