Design and fabrication of 2xD light emitting device arrays for IR scene projection

被引:17
作者
Das, NC [1 ]
Simonis, G [1 ]
Bradshaw, J [1 ]
Goldberg, A [1 ]
Gupta, N [1 ]
机构
[1] Army Res Lab, Microphoton Branch, Adelphi, MD 20783 USA
来源
TECHNOLOGIES FOR SYNTHETIC ENVIRONMENTS: HARDWARE IN THE LOOP TESTING IX | 2004年 / 5408卷
关键词
surface emitting devices; IR scene projection; 2-D LED array;
D O I
10.1117/12.564347
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
We at Army Research Laboratory (ARL) have developed 2xD light emitting device (LED) arrays for possible application in infrared (IR) scene projection experiments. These LEDs en-tit light in the 3-4 mum wavelength region with peak at 3.75 mum when operate at room temperature. The epitaxial structure for LED was grown on GaSb substrate by molecular beam epitaxial (MBE) technology. Mesa sizes ranging from 30-100 mum diameters were used in the device fabrication. By comparing with radiation from blackbody source, we found that the brightness temperature of the infrared LED is in the range of 300-600 K. We obtained very good uniformity in device current and voltage (IN) characteristics. This paper discusses the LED array design, fabrication and evaluation results.
引用
收藏
页码:136 / 143
页数:8
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