Uniplanar broad-band push-pull FET amplifiers

被引：30

作者：

Hsu, PC ^{[1
]}

Nguyen, C

Kintis, M

机构：

[1] Texas A&M Univ, Dept Elect Engn, College Stn, TX 77843 USA

[2] TRW Co Inc, Elect Syst & Technol Div, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1997年 / 45卷 / 12期

关键词：

amplifiers; MIC's; MMIC's; push-pull amplifiers; uniplanar circuits;

D O I：

10.1109/22.643753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the development of completely uniplanar broadband balanced push-pull FET amplifiers using slot line and coplanar waveguide, The amplifiers employ broad-band uniplanar baluns to achieve the push-pull function over a wide bandwidth, One amplifier, designed in the unconditionally stable region, exhibits a gain of 3.5-5 dB over the frequency range of 5.4-10 GHz and an output I-dB compression point of 19 dBm at 10 GHz. The other amplifier was designed in the potentially unstable range and achieves a high gain between 10-11 dB from 2 to 4 GHz and an output 1-dB compression point of 17 dBm at 4 GHz, These results show the feasibility of the push-pull FET amplifier configuration using uniplanar technology for microwave and millimeter wave integrated circuits and systems.

引用

页码：2150 / 2152

页数：3