Improved electrical properties of epoxy resin with nanometer-sized inorganic fillers

被引:9
作者
Horwath, John C. [1 ]
Schweickart, Daniel L. [1 ]
Garcia, Guido [1 ]
Klosterman, Donald [2 ]
Galaska, Mary [2 ]
Schrand, Amanda [2 ]
Walko, Lawrence C. [3 ]
机构
[1] Air Force Res Lab, Wright Patterson AFB, OH USA
[2] Univ Dayton Res Inst, Dayton, OH 45469 USA
[3] Innovat Sci Solut Inc, Dayton, OH 45469 USA
来源
PROCEEDINGS OF THE 27TH INTERNATIONAL POWER MODULATOR SYMPOSIUM AND 2006 HIGH VOLTAGE WORKSHOPS | 2006年
关键词
D O I
10.1109/MODSYM.2006.365213
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanometer-sized inorganic fillers are increasingly used as reinforcing materials for mechanical or thermal property improvement of polymers. Improvements in mechanical modulus or heat deflection temperature are often realized. These fillers may also improve some electrical properties such as corona endurance or dielectric breakdown voltage in polymers. In compact high voltage power supplies, epoxy resins are often the potting material of choice in manufacturing processes. This is often true for applications requiring a robust or position-insensitive insulation system design, such as mobile communications equipment or aerospace flight vehicles. Nanometer-sized inorganic fillers in epoxy resins can result in improved mechanical and electrical performance, without affecting the processes for component manufacturing. In our previous work, polyhedral oligomeric silsesquioxane (POSS) was selected as the nanometer-sized inorganic filler of interest. POSS-filled epoxies showed a five times improvement in ac corona lifetime for selected POSS-epoxy blends compared to unloaded epoxy [1]. In the current study, the average dielectric breakdown voltage of POSS-filled epoxy was increased thirty-four percent compared to unloaded epoxy. Additionally, scanning electron microscopy showed uniform dispersion of the POSS filler down to a level of 10-100 nm. Dispersion uniformity appears to be a critical parameter in obtaining the desired property enhancements.
引用
收藏
页码:189 / +
页数:2
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