Step-edge barriers: truths and kinetic consequences (vol 383, pg 766, 1986)

被引:23
作者
Kyuno, K
Ehrlich, G
机构
[1] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
关键词
clusters; epitaxy; growth; models of surface kinetics; nucleation; surface diffusion;
D O I
10.1016/S0039-6028(97)00249-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Observations of individual atoms on metal surfaces have shown that the diffusion potential at descending steps is not the simple repulsive barrier usually assumed in crystal growth. Instead, atoms may be held in asymmetric traps at step edges, and there are significant distortions of the potential near ascending steps. That the presence of step-edge traps instead of repulsive barriers can have a crucial effect on atomic kinetics is demonstrated by analyzing three processes important in crystal growth: the lifetime of atoms before incorporating into a cluster, dissociation of atoms from lattice steps, and incorporation on vicinal surfaces. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:L179 / L187
页数:9
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