Inelastic resonance tunneling in S-Sm-S tunnel structures

被引：5

作者：

Devyatov, IA

Kupriyanov, MY

机构：

[1] Scientific-Research Institute of Nuclear Physics, M. V. Lomonosov Moscow State University

来源：

JETP LETTERS | 1997年 / 65卷 / 02期

关键词：

D O I：

10.1134/1.567307

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Inelastic resonance tunneling through junctions with an amorphous interlayer and superconducting electrodes is studied. The form of the current-voltage characteristic I(V) at low temperature and the temperature dependence of the conductance G(0) at low bias are calculated and are found to be much different from the analogous dependences of structures with normal electrodes. (C) 1997 American Institute of Physics.

引用

页码：171 / 175

页数：5

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