Boron nanowires synthesized by laser ablation at high temperature

被引:65
作者
Meng, XM
Hu, JQ
Jiang, Y
Lee, CS
Lee, ST
机构
[1] City Univ Hong Kong, COSDAF, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat, Kowloon, Hong Kong, Peoples R China
关键词
D O I
10.1016/S0009-2614(03)00202-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Boron nanowires have been synthesized by laser ablation at high temperature. The as-synthesized boron nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and electron energy loss spectroscopy (EELS). The boron nanowires have lengths of several tens of micrometers long and diameters of 30-60 nm. The effects of the synthesis conditions on the formation of the boron nanowires were investigated and possible growth mechanisms of the boron nanowires are discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
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页码:825 / 828
页数:4
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