Preparation and characterization of CuIn1-xGaxSe2 thin films obtained by sequential evaporations and different selenization processes

被引：29

作者：

Caballero, R

Maffiotte, C

Guillén, C

机构：

[1] CIEMAT, Dept Energy Renovables, E-28040 Madrid, Spain

[2] CIEMAT, Dept Fis Nucl, E-28040 Madrid, Spain

来源：

THIN SOLID FILMS | 2005年 / 474卷 / 1-2期

关键词：

CuIn1-xGaxSe2; thin films; selenization processes;

D O I：

10.1016/j.tsf.2004.08.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of this work was to study the effect of thermal treatment (vacuum or Ar) on the main properties of CuIn1-xGaxSe2 (CIGS) thin films prepared by selenization of identical metallic alloys. All the CIGS films showed chalcopyrite structure with preferential orientation in the (112) plane. Ar thermal treatment led to better crystallinity, lower electrical conductivity and an increase in the grain size. It has been found that the Se diffusion and the distribution of the elements depend on the selenization atmosphere. After Ar selenization, an increase in band gap energy of 0.09 eV was observed, which is associated with a reduction in defects. (C) 2004 Elsevier B.V. All rights reserved.

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页码：70 / 76

页数：7

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