Band-edge exciton states in AlN single crystals and epitaxial layers

被引：68

作者：

Chen, L

Skromme, BJ ^{[1
]}

Dalmau, RF

Schlesser, R

Sitar, Z

Chen, C

Sun, W

Yang, J

Khan, MA

Nakarmi, ML

Lin, JY

Jiang, HX

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[4] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[5] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 19期

关键词：

D O I：

10.1063/1.1818733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band-edge excitonic properties of AlN are investigated using low-temperature (1.7 K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations. (C) 2004 American Institute of Physics.

引用

页码：4334 / 4336

页数：3

共 22 条

[1] Critical point transitions of wurtzite AlN in the vacuum-ultraviolet spectral range [J].