Silicon-containing polyesterimides

被引:36
作者
Bruma, M
Schulz, B
Kopnick, T
Robison, J
机构
[1] Inst Macromol Chem, Iasi, Romania
[2] Univ Potsdam, FZ DOBS, D-14513 Teltow, Germany
[3] Inst Thin Film Technol & Microsensors, D-14513 Teltow, Germany
[4] Raychem Corp, Menlo Park, CA 94025 USA
关键词
D O I
10.1088/0954-0083/12/3/306
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
New silicon-containing polyesterimides have been synthesized by a solution polycondensation reaction, in a high-boiling-point solvent, of a silicon-containing diacid chloride (namely bis(p-chlorocarbonyl-phenylene)-diphenylsilane) with certain dihydroxy-compounds having preformed imide rings. All these polymers were soluble in polar amidic solvents, such as N-methylpyrrolidinone and dimethylformamide, and gave thin transparent films on casting their solutions. The polymers exhibited high thermal stability, with the initial decomposition temperature being above 400 degrees C for fully aromatic structures. Most of these polymers did show a glass transition: those containing only aromatic rings being in the range of 180-236 degrees C, while those having some ethylene units along with aromatic ones being in the range of 160-178 degrees C. The dielectric constants of the free-standing polymer films are in the range of 3.04-3.19. Very thin coatings, in the range of tens of nanometres, which were deposited onto silicon wafers, exhibited smooth and pinhole-free surfaces in atomic force microscopy investigations. All these characteristics are discussed and compared with those of related polyester-imides which do not contain silicon.
引用
收藏
页码:429 / 443
页数:15
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