Performance of flexible polymeric light-emitting diodes under bending conditions

被引:102
作者
Paetzold, R
Heuser, K
Henseler, D
Roeger, S
Wittmann, G
Winnacker, A
机构
[1] Siemens AG, D-91052 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Dept Mat Sci, D-91058 Erlangen, Germany
关键词
D O I
10.1063/1.1574400
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic light-emitting diodes were fabricated on a 125-mum-thick polyethylene terephthalate substrate covered with 100 nm indium tin oxide. The luminance-current-voltage performance and the emission spectrum of the devices are investigated in the bent state under mechanical stress at different bending radii. Down to a curvature of 15 mm, no significant decrease in the device performance is found compared to the relaxed state, as well as to conventional devices on glass substrates. (C) 2003 American Institute of Physics.
引用
收藏
页码:3342 / 3344
页数:3
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