Magneto-Coulomb oscillation in ferromagnetic single electron transistors

被引：37

作者：

Shimada, H ^{[1
]}

Ono, K ^{[1
]}

Ootuka, Y ^{[1
]}

机构：

[1] Univ Tokyo, Cryogen Ctr, Bunkyo Ku, Tokyo 113, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1998年 / 67卷 / 04期

关键词：

single electron charging effect; Coulomb oscillation; ferromagnet; SET;

D O I：

10.1143/JPSJ.67.1359

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanism of the magneto-Coulomb oscillation in ferromagnetic single electron transistors (SET's) is theoretically considered. Variations in the chemical potentials of the conduction electrons in the ferromagnetic island electrode and the ferromagnetic lead electrodes in magnetic fields cause changes in the free energy of the island electrode of the SET. This is a plausible origin of the conductance oscillation of the SET in sweeping an applied magnetic field.

引用

页码：1359 / 1370

页数：12

共 28 条

[1]

Averin D., 1991, Modern Problems in Condensed Matter Sciences, V30, P173

[2] THEORY OF COULOMB-BLOCKADE OSCILLATIONS IN THE CONDUCTANCE OF A QUANTUM DOT [J].