Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

被引:129
作者
Namatsu, H [1 ]
Yamaguchi, T [1 ]
Nagase, M [1 ]
Yamazaki, K [1 ]
Kurihara, K [1 ]
机构
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 24301, Japan
关键词
D O I
10.1016/S0167-9317(98)00076-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new resist system providing small linewidth fluctuation has been developed for nanolithography. Hydrogen silsesquioxane (HSQ) resist used here has a small polymer size because of its three-dimensional framework. This framework reduces the size of aggregates in the resist film which strongly influence linewidth fluctuation of resist patterns. The scission of SiH bonds in HSQ by e-beam leads to the crosslinking required for the nega-patterning. In addition, the application of a TMAH developer realizes higher contrast an less thickness loss. Consequently, 20-nm-wide nega-patterns with a rectangular cross-sectional shape are successfully formed with linewidth fluctuation less than 2 nm.
引用
收藏
页码:331 / 334
页数:4
相关论文
共 8 条
  • [1] FRYE CL, J AM CHEM SOC, V92
  • [2] An electron beam nanolithography system and its application to Si nanofabrication
    Kurihara, K
    Iwadate, K
    Namatsu, H
    Nagase, M
    Takenaka, H
    Murase, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (12B): : 6940 - 6946
  • [3] Nano-scale fluctuations in electron beam resist pattern evaluated by atomic force microscopy
    Nagase, M
    Namatsu, H
    Kurihara, K
    Iwadate, K
    Murase, K
    Makino, T
    [J]. MICROELECTRONIC ENGINEERING, 1996, 30 (1-4) : 419 - 422
  • [4] 10-NM SILICON LINES FABRICATED IN (110) SILICON
    NAMATSU, H
    NAGASE, M
    KURIHARA, K
    WADATE, K
    MURASE, K
    [J]. MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) : 71 - 74
  • [5] SMITH AL, 1983, ANAL SILICONE
  • [6] Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates
    Takahashi, Y
    Namatsu, H
    Kurihara, K
    Iwadate, K
    Nagase, M
    Murase, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (08) : 1213 - 1217
  • [7] YAMAGUCHI T, IN PRESS APPL PHYS L
  • [8] NANO EDGE ROUGHNESS IN POLYMER RESIST PATTERNS
    YOSHIMURA, T
    SHIRAISHI, H
    YAMAMOTO, J
    OKAZAKI, S
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (06) : 764 - 766