Lattice parameter changes in graphite with boron doping

被引：26

作者：

Hishiyama, Y ^{[1
]}

Inagaki, M

机构：

[1] Musashi Inst Technol, Setagaya Ku, Tokyo 1588557, Japan

[2] Aichi Inst Technol, Toyota 4700392, Japan

来源：

CARBON | 2001年 / 39卷 / 01期

关键词：

graphite; crystal structure;

D O I：

10.1016/S0008-6223(00)00207-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The preparation of a boron-doped graphite films at high temperatures as 2350-2800 °C is presented. Their structure and transport properties were experimentally studied. Results show that an increase in a0 and a decrease in c0 with increasing atomic fraction of boron up to 2.2 at.%. It also indicates that not only the samples prepared by doping at very high temperatures under quasi-equilibrium conditions but also either those prepared under non-equilibrium conditions by chemical vapor deposition (CVD) showed similar changes in d002.

引用

页码：150 / 152

页数：3

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