Avalanche breakdown and breakdown luminescence in p-π-n GaN diodes

被引：39

作者：

Osinsky, A

Shur, MS

Gaska, R

Chen, Q

机构：

[1] APA Opt Inc, Blaine, MN 55449 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 07期

关键词：

D O I：

10.1049/el:19980535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the observation of electric breakdown in graded p-pi-n GaN photodiodes. The breakdown is accompanied by microplasma formation. The photocurrent strongly increases at the breakdown voltages, demonstrating a potential use of these devices as avalanche photodiodes (APDs).

引用

页码：691 / 692

页数：2

共 6 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) : 7827 - 7834
[5] SHUR MS, 1990, PHYSICS SEMICONDUCTO, P172
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