Electrosynthesis of Bismuth Vanadate Photoelectrodes

被引：37

作者：

Dall'Antonia, Luiz Henrique ^{[1
]}

de Tacconi, Norma R. ^{[1
]}

Chanmanee, Wilaiwan ^{[1
]}

Timmaji, Hari ^{[1
]}

Myung, Noseung ^{[2
]}

Rajeshwar, Krishnan ^{[1
]}

机构：

[1] Univ Texas Arlington, Ctr Renewable Energy Sci & Technol, Arlington, TX 76019 USA

[2] Konkuk Univ, Dept Appl Chem, Chungju 380701, Chungbuk, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 05期

关键词：

bismuth compounds; electrochemical electrodes; electrodeposition; electrodeposits; photoelectrochemistry; platinum; precipitation; scanning electron microscopy; semiconductor thin films; X-ray chemical analysis; X-ray photoelectron spectra; VISIBLE-LIGHT; BIVO4; PHOTOCATALYST; THIN-FILMS; ELECTROCATALYSTS; CATALYSTS; O-2;

D O I：

10.1149/1.3322641

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A two-step electrosynthesis strategy was conceived and demonstrated for the preparation of BiVO4 films supported on Pt substrate. In the first step, a Bi film was electrodeposited on the substrate from an acidic BiCl3 medium. In the second step, this film, after transfer to a medium containing (hydrolyzed) vanadium precursor, was anodically stripped to generate Bi3+. In situ precipitation then yielded BiVO4 on the substrate. The film morphology and surface/bulk composition were probed by scanning electron microscopy, energy-dispersive X-ray analysis, and X-ray photoelectron spectroscopy. The photoelectrochemical data were consistent with the in situ formation of n-type semiconductor films with an energy bandgap of 2.14 eV.

引用

页码：D29 / D32

页数：4

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