9.3W CW (In)AlGaAs 100μm wide lasers at 970nm

被引：27

作者：

O'Brien, S ^{[1
]}

Zhao, H ^{[1
]}

Schoenfelder, A ^{[1
]}

Lang, RJ ^{[1
]}

机构：

[1] SDL Inc, San Jose, CA 95134 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 22期

关键词：

semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19971234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wide aperture lasers have been fabricated which produce a record maximum power of 9.3W CW at 970nm. This record power is achieved with (In)AlGaAs-based materials using relatively short cavity lengths and standard mounting onto copper heatsinks. Detailed measurements of the emitted far field pattern in both the fast and slow axes have been made up to 6W CW power level.

引用

页码：1869 / 1871

页数：3

共 4 条

[1]

BOTEZ B, COMMUNICATION

[2] 8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers [J].