Voltage induced magnetic anisotropy change in ultrathin Fe80Co20/MgO junctions with Brillouin light scattering

被引：50

作者：

Ha, Seung-Seok ^{[1
]}

Kim, Nam-Hee ^{[1
]}

Lee, Sukmock ^{[1
]}

You, Chun-Yeol ^{[1
]}

Shiota, Yoichi ^{[2
]}

Maruyama, Takuto ^{[2
]}

Nozaki, Takayuki ^{[2
]}

Suzuki, Yoshishige ^{[2
]}

机构：

[1] Inha Univ, Dept Phys, Inchon 402751, South Korea

[2] Osaka Univ, Dept Mat Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 14期

关键词：

Brillouin spectra; chromium; cobalt alloys; gold; indium compounds; iron alloys; magnesium compounds; magnetic anisotropy; optical Kerr effect; tin compounds; FCC FE(001); FILMS; FERROMAGNETISM; SURFACES;

D O I：

10.1063/1.3385732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate voltage induced perpendicular magnetic anisotropy (PMA) changes in MgO/Cr/Au/Fe80Co20/MgO/polyimide/ indium tin oxide (ITO). In order to observe the PMA change, spin wave frequency was measured by Brillouin light scattering with finite bias voltages applied between Au and ITO electrodes. The obtained PMA constants from spin wave frequency of Fe80Co20 layer show clear bias voltage dependences, which agree well with the previous polar-Kerr effect measurement results and theoretical study. This study suggests spintronics devices operated by an electric field for next generation devices complying with low-power consumption.

引用

页数：3

共 26 条

[1] Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor [J].