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Hot-carrier effects in deep submicron thin film SOI MOSFETs
被引：11
作者：
Renn, SH
Pelloie, JL
Balestra, F
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.554119
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
Hot-carrier effects are thoroughly investigated in deep submicron N- and P-channel SOI MOSFETs, for gate lengths down to sub-0.1 mu m. Three main types of hot-carrier injections (maximum gate current, maximum substrate current and parasitic bipolar transistor action) are studied. A reliable lifetime prediction is proposed using accurate time-dependent laws for both N- and P-channel SOI MOSFETs.
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页码：877 / 880
页数：4
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