Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces

被引：24

作者：

Choi, Soojeong ^{[1
]}

Kim, Tong-Ho

Everitt, Henry O.

Brown, April

Losurdo, Maria

Brun, Giovanni

Moto, Akihiro

机构：

[1] Duke Univ, Dept Phys, Durham, NC 27708 USA

[2] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

[3] CNR, Inst Inorgan Methodol Plasmas, I-470126 Bari, Italy

[4] Innovat Core SEI Inc, Santa Clara, CA 95051 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 03期

关键词：

D O I：

10.1116/1.2720856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be art effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar c-plane GaN (0001) and nonpolar m-plane GaN (1 - 100) surfaces for Ga beam equivalent pressures in the range of 8.96X 10(-8)-1.86x 10(-7) Torr, Ga pulses in the range of 5-360 s, and for substrate temperatures between 650 and 750 degrees C. (c) 2007 American Vacuum Society.

引用

页码：969 / 973

页数：5

共 16 条

[1] Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN [J].