Schottky diodes and field-effect transistors based on conjugated thiophenes

被引:15
作者
Torsi, L
Malitesta, C
Sabbatini, L
Zambonin, PG
Dodabalapur, A
Katz, HE
机构
[1] Univ Bari, Dipartimento Chim, I-70126 Bari, Italy
[2] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC MATERIALS SENSORS AND SYSTEMS | 1998年 / 5卷 / 3-4期
关键词
conjugated thiophenes; field-effect transistors; Schottky diodes;
D O I
10.1016/S0928-4931(97)00049-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we present a study of organic devices such as Schottky diodes and field-effect transistors based on thiophene oligomers/ polymers. These organic semiconductors can be prepared in the form of a thin layer on a number of substrates, such as glass and flexible plastic. This makes these devices particularly interesting because of the potential advantages they possess in terms of flexibility, low weight, and low cost. The effects produced by rapid thermal annealing on alpha-sexithiophene (alpha-6T) thin film transistors (TFTs) are shown to be very important both for the improvement of the on/off ratio of the devices and as a means to shed some light on the understanding of the transport mechanisms in these devices. The electrochemical investigation of the polybithiophene/TiO2 heterojunction clearly shows the rectifying character of the device. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:233 / 236
页数:4
相关论文
共 20 条
[1]   ABSENCE OF SCHOTTKY-BARRIER FORMATION IN JUNCTIONS OF AL AND POLYPYRROLE POLYELECTROLYTE POLYMER COMPLEXES [J].
BANTIKASSEGN, W ;
DANNETUN, P ;
INGANAS, O ;
SALANECK, WR .
THIN SOLID FILMS, 1993, 224 (02) :232-236
[2]   METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY-TYPE DIODES OF DOPED THIOPHENE OLIGOMERS [J].
DELEEUW, DM ;
LOUS, EJ .
SYNTHETIC METALS, 1994, 65 (01) :45-53
[3]   ORGANIC TRANSISTORS - 2-DIMENSIONAL TRANSPORT AND IMPROVED ELECTRICAL CHARACTERISTICS [J].
DODABALAPUR, A ;
TORSI, L ;
KATZ, HE .
SCIENCE, 1995, 268 (5208) :270-271
[4]  
FICHOU D, 1989, SYNTHETIC MET, V28, pC729, DOI 10.1016/0379-6779(89)90597-3
[5]   STRUCTURAL BASIS FOR HIGH CARRIER MOBILITY IN CONJUGATED OLIGOMERS [J].
GARNIER, F ;
HOROWITZ, G ;
PENG, XZ ;
FICHOU, D .
SYNTHETIC METALS, 1991, 45 (02) :163-171
[6]   ALL-POLYMER FIELD-EFFECT TRANSISTOR REALIZED BY PRINTING TECHNIQUES [J].
GARNIER, F ;
HAJLAOUI, R ;
YASSAR, A ;
SRIVASTAVA, P .
SCIENCE, 1994, 265 (5179) :1684-1686
[7]   ELECTROLUMINESCENCE FROM OLIGOTHIOPHENE-BASED LIGHT-EMITTING DEVICES [J].
GEIGER, F ;
STOLDT, M ;
SCHWEIZER, H ;
BAUERLE, P ;
UMBACH, E .
ADVANCED MATERIALS, 1993, 5 (12) :922-925
[8]   THIN-FILM TRANSISTORS BASED ON ALPHA-CONJUGATED OLIGOMERS [J].
HOROWITZ, G ;
FICHOU, D ;
PENG, XZ ;
GARNIER, F .
SYNTHETIC METALS, 1991, 41 (03) :1127-1130
[9]   POLYPYRROLE-SEMICONDUCTOR SCHOTTKY BARRIERS [J].
INGANAS, O ;
SKOTHEIM, T ;
LUNDSTROM, I .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3636-3639
[10]   Precursor synthesis, coupling, and TFT evaluation of end-substituted thiophene hexamers [J].
Katz, HE ;
Dodabalapur, A ;
Torsi, L ;
Elder, D .
CHEMISTRY OF MATERIALS, 1995, 7 (12) :2238-2240