Electronic properties of arsenic-doped gallium nitride

被引：31

作者：

Guido, LJ ^{[1
]}

Mitev, P ^{[1
]}

Gherasimova, M ^{[1
]}

Gaffey, B ^{[1
]}

机构：

[1] Yale Univ, Ctr Microelect Mat & Struct, New Haven, CT 06520 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic-doped GaN films were grown via metalorganic chemical vapor deposition using trimethylgallium, ammonia, and arsine precursors. The arsenic concentration increases from 3X10(16) to 5X10(17) cm(-3) in response to a change in arsine mole fraction from 3.3X10(2) to 3.2 X 10(4) ppm. The electron mobility increases with arsenic content reaching a maximum value of 374 cm(2)/V s at 300 K. In addition, the integrated photoluminescence intensity exhibits a 35-fold increase in magnitude at 300 K. To explain these findings, a simple physical model is proposed in which arsenic "impurities" occupy otherwise vacant sites on both the gallium and nitrogen sublattices. (C) 1998 American Institute of Physics.

引用

页码：2005 / 2007

页数：3

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