Implantation of Al and B acceptors into alpha-SiC and pn junction diodes

被引：7

作者：

Takemura, O ^{[1
]}

Kimoto, T

Matsunami, H

Nakata, T

Watanabe, M

Inoue, M

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 60601, Japan

[2] Ion Engn Res Inst Corp, Osaka 57301, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

ion implantation; acceptor; electrical activation; pn junction diode;

D O I：

10.4028/www.scientific.net/MSF.264-268.701

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum (Al) and boron (B) ion implantations at room temperature into n-type 6H-SiC epilayers have been investigated. A nearly perfect electrical activation ratio (>90%) could be attained by high-temperature annealing at 1600 degrees C for Al+ and 1700 degrees C for B+ implantations. Mesa pn junction diodes formed by either Al+ or B+ implantation exhibited high blocking voltages of 950 similar to 1070V, which are 80 similar to 90% of the ideal value predicted in the diode structure. The forward current can clearly be divided into two components of diffusion and recombination currents. Comparison on the performance of Al+- and B+-implanted diodes is discussed.

引用

页码：701 / 704

页数：4

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