Numerical simulation of tetracene light-emitting transistors: A detailed balance of exciton processes

被引：56

作者：

Verlaak, S

Cheyns, D

Debucquoy, M

Arkhipov, V

Heremans, P

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, EE Dept, Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 12期

关键词：

D O I：

10.1063/1.1792372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We assess the possibility to use an ambipolar organic light-emitting transistor structure as gain medium for an electrically pumped laser. Singlet and triplet continuity equations are solved together with Poissons and drift-diffusion equations in two dimensions. The solution allows for a detailed balance between the exciton decay, quenching and generation mechanisms. Simulations of a tetracene light-emitting transistor show that triplets are most dominant in quenching singlets. Singlet-triplet quenching can ultimately prevent pure tetracene crystals or films-when provided with a realistic optical feedback structure, to reach the threshold for stimulated emission. (C) 2004 American Institute of Physics.

引用

页码：2405 / 2407

页数：3

共 16 条

[1] Prospects for electrically pumped organic lasers [J].