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Impact of profile scaling on high-injection barrier effects in advanced UHV/CVD SiGe HBTs
被引：16
作者：
Joseph, AJ
Cressler, JD
Richey, DM
Harame, DL
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.553578
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
We present the first comprehensive investigation of the impact of Ge profile shape as well as the scaling of collector and base doping profiles on high-injection heterojunction barrier effects in advanced UHV/CVD SiGe HBT's over the temperature range of -73 degrees C to 85 degrees C. Results indicate that careful Ge profile design tailored with a proper collector profile design are required to push the barrier onset current density (J(C,barrier)) to well beyond the typical circuit operating point.
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页码：253 / 256
页数：4
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