Microlensed red and violet diode lasers in an extended cavity geometry

被引：2

作者：

Carruthers, AE ^{[1
]}

Lake, TK ^{[1
]}

Shah, A ^{[1
]}

Allen, JW ^{[1
]}

Sibbett, W ^{[1
]}

Dholakia, K ^{[1
]}

机构：

[1] Univ St Andrews, Sch Phys & Astron, JF Allen Phys Res Labs, St Andrews KY16 9SS, Fife, Scotland

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2004年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.1791311

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We examine the behavior of two microlensed diode lasers at 413 and 661 nm placed in both free-running and extended cavity geometries. The 25 mW free-running 413 nm diode shows current tuning over 40 GHz and the 50 mW, 661 nm diode shows tuning of 55 GHz. In extended cavity the 413 nm diode coarsely tunes 5 nm and finely tunes 6 GHz, with a linewidth of 4 MHz. The 661 nm diode coarsely tunes 11 nm with fine tuning of 6 GHz. Beam profile ratios for the 413 and 661 nm microlensed diodes are 1:1.06 and 1:1.10 respectively. (C) 2004 American Institute of Physics.

引用

页码：3360 / 3362

页数：3

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