AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching

被引：8

作者：

Gao, Y ^{[1
]}

Stonas, AR

Ben-Yaacov, I

Mishra, U

DenBaars, SP

Hu, EL

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 01期

关键词：

D O I：

10.1049/el:20030018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoelectrochemical (PEC) wet etching was used to form the aperture of a novel AlGaN/GaN CAVET current aperture vertical electron transistor (CAVET) device. The PEC etch was optimised to produce a smooth, uniform undercut through the selective removal of the lower bandgap InGaN. The I-V characteristics of the initial devices indicate that modulation and pinch-off of the current can be obtained.

引用

页码：148 / 149

页数：2

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