DII revisited in an modern guise -: 6H- and 4H-SiC

被引：33

作者：

Sridhara, SG ^{[1
]}

Nizhner, DG

Devaty, RP

Choyke, WJ

Dalibor, T

Pensl, G

Kimoto, T

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[2] Univ Erlangen Nurnberg, Inst Angew Phys, D-91058 Erlangen, Germany

[3] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 60601, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

photoluminescence; defects; ion implantation;

D O I：

10.4028/www.scientific.net/MSF.264-268.493

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A persistent intrinsic defect spectrum is observed in the luminescence spectra of 6H and 4H SiC epilayers which were ion-implanted with ten different ions and subsequently annealed. We argue that the defect spectra observed in the two polytypes are in fact due to the D-II defect center, previously reported in 3C and 15R SiC.

引用

页码：493 / 496

页数：4

共 8 条

[1]

CHOYKE WJ, 1972, I PHYS C SER, V16, P218

[2]

HERZBERG G, 1950, SPECTRA DIATOMIC MOL, P513

[3]

ITOH H, COMMUNICATION

[4] PHOTOLUMINESCENCE OF RADIATION DEFECTS IN ION-IMPLANTED H-6 SIC [J].

PATRICK, L ;

CHOYKE, WJ .

PHYSICAL REVIEW B, 1972, 5 (08) :3253-&

[5] LOCALIZED VIBRATIONAL MODES OF A PERSISTENT DEFECT IN ION-IMPLANTED SIC [J].

PATRICK, L ;

CHOYKE, WJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) :565-567

[6]

Peppermuller C, 1997, APPL PHYS LETT, V70, P1014, DOI 10.1063/1.118468

[7] RAMAN SPECTRUM OF DIAMOND [J].

SOLIN, SA ;

RAMDAS, AK .

PHYSICAL REVIEW B, 1970, 1 (04) :1687-&

[8] Phosphorus-related donors in 6H-SiC generated by ion implantation [J].

Troffer, T ;

Peppermuller, C ;

Pensl, G ;

Rottner, K ;

Schoner, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) :3739-3743

← 1 →