Galvanomagnetic properties of Hg1-xMnxTe1-ySey semimagnetic semiconductors

The galvanomagnetic properties of single crystals of the semimagnetic semiconductors Hg1-xMnxTe1-ySey with 0.01<y <0.1 and x=0.05 and 0.14 in the temperature range 4.2-300 K are investigated. The features of the temperature dependence of the Hall coefficient R-H and the complicated behavior of R-H in a magnetic field are attributed quantitatively to the existence of three groups of current carriers, viz., electrons and two types of holes, for which the temperature dependences of the densities and mobilities are obtained. A transition from p-type to n-type conductivity is observed as the Se content is increased, and the negative magnetoresistance simultaneously gives way to positive magnetoresistance. (C) 1997 American Institute of Physics.