Modeling analysis of temperature field and species transport inside the system for sublimation growth of SiC in tantalum container

被引：25

作者：

Egorov, YE

Galyukov, AO

Gurevich, SG

Makarov, YN

Mokhov, EN

Ramm, MG

Ramm, MS

Roenkov, AD

Segal, AS

Vodakov, YA

Vorob'ev, AN

Zhmakin, AI

机构：

[1] Univ Erlangen Nurnberg, Fluid Mech Inst, D-91058 Erlangen, Germany

[2] Ctr Adv Technol, St Petersburg 194156, Russia

[3] High Frequency Current Inst, St Petersburg 197376, Russia

[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] Inst Fine Mech & Opt, St Petersburg, Russia

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

sublimation growth; silicon carbide; bulk crystals; tantalum;

D O I：

10.4028/www.scientific.net/MSF.264-268.61

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An analysis of qualtities determining growth rate and shape of crystallization front during sublimation growth of bulk Sit: crystals is presented. It is shown that accurate modeling of global heat transfer with taking into account details of the design of the growth system is necessary. The effect of extremely low heat conductivity of the SIC powder is discussed. It is shown that an increase of the size of the crystal and a decrease of the volume of the source during the growth of bulk crystals results in a variation of the temperature distribution inside the crucible. A new model of species transport during sublimation growth of bulk SiC crystals is proposed which takes into account Stephan flow.

引用

页码：61 / 64

页数：4

共 4 条

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Karpov, SY ;

Makarov, YN ;

Mokhov, EN ;

Ramm, MG ;

Ramm, MS ;

Roenkov, AD ;

Talalaev, RA ;

Vodakov, YA .

JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) :408-416

[2]

KITANIN EL, 1997, IN PRESS MAT SCI E B

[3]

Vodakov YA, 1997, PHYS STATUS SOLIDI B, V202, P177, DOI 10.1002/1521-3951(199707)202:1<177::AID-PSSB177>3.0.CO

[4]

2-I

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