Ortho-para conversion of interstitial H2 in Si

被引：34

作者：

Hiller, M. ^{[1
]}

Lavrov, E. V. ^{[1
]}

Weber, J. ^{[1
]}

机构：

[1] Tech Univ Dresden, D-01062 Dresden, Germany

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.98.055504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ortho-para conversion of isolated interstitial H-2 in single-crystalline Si is studied by Raman scattering. This process is suggested to be caused by the interaction of H-2 with the nuclear magnetic moment of Si-29. At 77 K the ortho-to-para conversion rate is approximately 0.0 15 h(-1) for all Si samples employed in the experiments. At 300 K, the reverse para-to-ortho transition is observed. It occurs with a rate of roughly 0.18 h(-1) and results in a thermodynamically nonequilibrium ortho-para ratio.

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页数：4

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