Defect and stress control of AlGaN for fabrication of high performance UV light emitters

被引：27

作者：

Amano, H

Miyazaki, A

IIda, K

Kawashima, T

Iwaya, M

Kamiyama, S

Akasaki, I

Liu, R

Bell, A

Ponce, FA

Sahonta, S

Cherns, A

机构：

[1] Meijo Univ, Dept Mat Sci & Engn, Century COE Nanofactory 21, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2004年 / 201卷 / 12期

关键词：

D O I：

10.1002/pssa.200405044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reviews the recent development of group III AlGaN-based UV light emitters. Critical issues with respect to the development of high-performance devices are discussed. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2679 / 2685

页数：7

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