Microwave dielectric properties of the ZrO2-ZnO-Ta2O5-TiO2 systems

被引：24

作者：

Kim, WS ^{[1
]}

Kim, JH ^{[1
]}

Hur, KH ^{[1
]}

Lee, JY ^{[1
]}

机构：

[1] Samsung Electromech Co, R&D Ctr, Mat Res Team, Suwon 442743, South Korea

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 79卷 / 2-3期

关键词：

microwave dielectric properties; Zr1-x(Zn1/3Ta2/3)(x)TiO4; Zn1/3Ta2/3TiO4; alpha-PbO2 type solid solutions;

D O I：

10.1016/S0254-0584(02)00267-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The physical and microwave dielectric properties of the new Zr1-x(Zn1/3Ta2/3)(x) TiO4 (0.2 less than or equal to x less than or equal to 0.6) systems have been investigated as a function of the amount of Zn1/3Ta2/3O2 Substitution. Without sintering aids, Zr1-x(Zn1/3Ta2/3)(x) TiO4 was sintered well at 1300 degreesC, compared to the ZrTiO4. Dielectric constant (K) showed nearly same value below x = 0.35 and increased with increasing amount of Zn1/3Ta2/3O2 contents above x = 0.40. Zr1-x(Zn1/3Ta2/3)(x) TiO4 materials have excellent microwave dielectric properties with K = 42.5, Qf(0) = 40,200 and temperature coefficient of resonant frequency (TCF) = 1.1 ppm/degreesC at x = 0.3. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：204 / 207

页数：4

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