Strain modification of GaN in AlGaN/GaN epitaxial films

被引：33

作者：

Steude, G ^{[1
]}

Meyer, BK

Göldner, A

Hoffmann, A

Kaschner, A

Bechstedt, F

Amano, H

Akasaki, I

机构：

[1] Univ Giessen, Inst Phys, D-35952 Giessen, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany

[4] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 5A期

关键词：

AlGaN; GaN; stress and strain; heterostructure;

D O I：

10.1143/JJAP.38.L498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated AlGaN/GaN heterostructures frown by metal-organic vapor-phase epitaxy on sapphire by calorimetric absorption, transmission and reflection spectroscopy (CAS/CTS/CRS) at 47 mK. The AlGaN film on a 2-mu m-thick GaN layer introduces additional compressive strain into the GaN layer. A blue shift of the A- and B-exciton line positions is directly proportional to the AlN molar fraction in the films. The amount of strain in the GaN layers is quantified by micro-Raman experiments. We can explain the results by taking into account the elastic properties of GaN and AlGaN.

引用

页码：L498 / L500

页数：3

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