Electroluminescence of ion-implanted Si-SiO2 structures

被引：7

作者：

Baraban, AP ^{[1
]}

Konorov, PP ^{[1
]}

Malyavka, LV ^{[1
]}

Troshikhin, AG ^{[1
]}

机构：

[1] St Petersburg State Univ, Inst Phys, St Petersburg 198904, Russia

来源：

TECHNICAL PHYSICS | 2000年 / 45卷 / 08期

关键词：

D O I：

10.1134/1.1307014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Specific features of the electroluminescence of ion-implanted (Ar ion implantation in oxide layer bulk) and ion-synthesized (SIMOX technology) Si-SiO2 structures were studied. The electroluminescence from the electrolyte-insulator-semiconductor system was registered in the 250-800 nm range at room temperature. It has been found that implantation increases the concentration of centers already present in the oxide layer bulk and creates new luminescent centers. The nature and the models of the centers are discussed. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：1042 / 1044

页数：3

共 6 条

[1]

Baraban A.P., 1988, ELECT SIO2 LAYERS SI

[2] ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J].

DIMARIA, DJ ;

KIRTLEY, JR ;

PAKULIS, EJ ;

DONG, DW ;

KUAN, TS ;

PESAVENTO, FL ;

THEIS, TN ;

CUTRO, JA ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :401-416

[3]

GARIDO B, 1995, J NONCRYST SOLIDS, V187, P101

[4]

RYSSEL H, 1978, IONENIMPLANTATION

[5]

Skorupa W, 1996, APPL PHYS LETT, V68, P2410, DOI 10.1063/1.116150

[6] A NEW INTRINSIC DEFECT IN AMORPHOUS SIO2 - TWOFOLD COORDINATED SILICON [J].

SKUJA, LN ;

STRELETSKY, AN ;

PAKOVICH, AB .

SOLID STATE COMMUNICATIONS, 1984, 50 (12) :1069-1072

← 1 →