Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric

被引：10

作者：

Donaton, RA ^{[1
]}

Iacopi, F ^{[1
]}

Baklanov, MR ^{[1
]}

Shamiryan, D ^{[1
]}

Coenegrachts, B ^{[1
]}

Struyf, H ^{[1
]}

Lepage, M ^{[1
]}

Meuris, M ^{[1
]}

Van Hove, M ^{[1
]}

Gray, WD ^{[1
]}

Meynen, H ^{[1
]}

De Roest, D ^{[1
]}

Vanhaelemeersch, S ^{[1
]}

Maex, K ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854292

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Physical and electrical characterization of Dow Coming silsesquioxane-based ultra-low k dielectric is presented. The film properties, such as refractive index, SiH bond density, thermal stability and susceptibility to moisture absorption are investigated as a function of processing conditions. It is shown that exposure of the films to plasma environments results in change of porosity. The low-kappa dielectric film with a pore size around 3.5 nm is integrated in 0.2 mu m single damascene successfully structures.

引用

页码：93 / 95

页数：3