TFA image sensors: From the one transistor cell to a locally adaptive high dynamic range sensor

被引：12

作者：

Schneider, B ^{[1
]}

Fischer, H ^{[1
]}

Benthien, S ^{[1
]}

Keller, H ^{[1
]}

Lule, T ^{[1
]}

Rieve, P ^{[1
]}

Sommer, M ^{[1
]}

Schulte, J ^{[1
]}

Bohm, M ^{[1
]}

机构：

[1] Univ Gesamthsch Siegen, Inst Halbleitertech, D-57068 Siegen, Germany

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TFA (Thin Film on ASIC) image sensors consist of an amorphous silicon (a-Si:H) based optical detector on top of an ASIC which performs signal readout or signal processing for each individual pixel. In this paper we present recent prototypes of image sensors in TFA technology. The ASICs have been fabricated in a standard 0.7 mu m CMOS process, the detector multilayer was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD).

引用

页码：209 / 212

页数：4