Atomic oxygen recombination on fused silica: modelling and comparison to low-temperature experiments (300 K)

被引:69
作者
Cartry, G
Magne, L
Cernogora, G
机构
[1] Univ Paris Sud, Phys Gaz & Plasmas Lab, F-91405 Orsay, France
[2] Univ Versailles, CNRS, Serv Aeron, F-78085 Versailles, France
关键词
D O I
10.1088/0022-3727/33/11/309
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work is devoted to the study of atomic oxygen recombination on a glass surface, mainly in connection with atomic sources development. Ln this paper we present a non-stationary model for atomic oxygen recombination on a fused silica surface. Kinetics equations for oxygen atoms, taking into account heterogeneous reactions between gaseous atoms and the surface (Eley-Rideal mechanisms), as well as homogeneous processes involving surface migration of adsorbed species (Langmuir-Hinshelwood mechanisms), are solved. Surface reaction coefficients an calculated, and the choice of numerical values for surface parameters is discussed. The solution to the equations is compared to our previous experiments concerning the influence of the surface state on atomic recombination. An estimation is made of surface reaction coefficient values.
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页码:1303 / 1314
页数:12
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